Browsing by Author "Perevertaylo, VL"

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    Angular independent silicon detector for dosimetry in external beam radiotherapy
    (American Association of Physicists in Medicine, 2015-07-17) Petasecca, M; Alhujaili, S; Aldosari, AH; Fuduli, I; Newal, M; Porumb, CS; Carolan, MG; Nitschke, K; Lerch, MLF; Kalliopuska, J; Perevertaylo, VL; Rosenfeld, AB
    Purpose: In this work, the “edgeless” silicon detector technology is investigated, in combination with an innovative packaging solution, to manufacture silicon detectors with negligible angular response. The new diode is also characterized as a dosimeter for radiotherapy with the aim to verify its suitability as a single detector for in vivo dosimetry as well as large area 2D array that does not require angular correction to their response. Methods: For the characterisation of the “edgeless-drop-in” detector technology, a set of samples have been manufactured with different sensitive areas (1 × 1 and 0.5 × 0.5 mm2) and different thicknesses (0.1 and 0.5 mm) in four different combinations of top and peripheral p–n junction fabricated on p-type and n-type silicon substrates. The diode probes were tested in terms of percentage depth dose (PDD), dose rate, and linearity and compared to ion chambers. Measurements of the output factor have been compared to film. The angular response of the diodes probes has been tested in a cylindrical PMMA phantom, rotated with bidirectional accuracy of 0.25° under 10 × 10 cm2 6 MV Linac photon beam. The radiation hardness has been investigated as well as the effect of radiation damage on the angular and dose rate response of the diode probes when irradiated with photons from a Co-60 gamma source up to dose of 40 kGy. Results: The PDDs measured by the edgeless detectors show an agreement with the data obtained using ion chambers within ±2%. The output factor measured with the smallest area edgeless diodes (0.5 × 0.5 mm2—0.1 and 0.5 mm thick) matches EBT3 film to within 2% for square field size from 10 to 0.5 cm side equivalent distance. The dose rate dependence in a dose per pulse range of 0.9 × 10−5–2.7 × 10−4 Gy/pulse was less than −7% and +300% for diodes fabricated on p-type and n-type substrates, respectively. The edgeless diodes fabricated on the p-type substrate demonstrated degradation of the response as a function of the irradiation dose within 5%–15%, while diodes on the n-type substrate show a variation of approximately 30% after 40 kGy. The angular response of all probes is minimal (within 2%) but the N on N and P on P configurations show the best performances with an angular dependence of ±1.0% between 0° and 180° in the transversal direction. In this configuration, the space charge region of the passive diode extends from the behind and sidewall toward the anode on the top providing beneficial electric field distribution in the peripheral area of the diode. Such performance has also been tested after irradiation by Co-60 up to 40 kGy with no measurable change in angular response. Conclusions: A new edgeless-drop-in silicon diode fabrication and packaging technology has been used to develop detectors that show no significant angular dependence in their response for dosimetry in radiation therapy. From the characterisation of the diodes, proposed in a wide range of different geometries and configurations, the authors recommend the P-on-P detectors in conjunction with “drop in” packaging technology as the candidate for further development as single diode probe or 2D diode array for dosimetry in radiotherapy. © 2015 American Association of Physicists in Medicine
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    Development of a large-area silicon α-particle detector
    (Elsevier, 2014-09) Tran, LT; Prokopovich, DA; Lerch, MLF; Petasecca, M; Siegele, R; Reinhard, MI; Perevertaylo, VL; Rosenfeld, AB
    Circular ion-implanted silicon detector of α-particles with a large, 5-cm2, sensitive area has been developed. An advantage of the detector is that the detector surface is easily cleanable with chemicals. The hardened surface of the detector shows no signs of deterioration of the spectroscopic and electrical characteristics upon repeated cleaning. The energy resolution along the diameters of the detector was (1.0±0.1)% for the 5.486-MeV α-particles. Detailed tests of the charge collection efficiency and uniformity of the detector entrance window were also performed with a 5.5-MeV He2+ microbeam. © 2014, Elsevier Ltd.
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    IBIC microscopy – the powerful tool for testing micron – sized sensitive volumes in segmented radiation detectors used in synchrotron microbeam radiation and hadron therapies
    (Elsevier B. V., 2019-11-01) Pastuovic, Z; Davis, J; Tran, LT; Paino, JR; Dipuglia, A; James, B; Povoli, M; Kok, A; Perevertaylo, VL; Siegele, R; Prokopovich, DA; Lerch, MLF; Petasecca, M; Rosenfeld, AB; Cohen, DD
    Ion Beam Induced Charge (IBIC) microscopy performed using highly tuned microbeams of accelerated ions with energies in the MeV range is the powerful tool for analysis of charge carrier transport properties in semiconductor devices based on semiconductor hetero-junction, metal-on-semiconductor and semiconductor-on-insulator configurations. Here we present two cases of recent applications of the IBIC microscopy in the field of medical radiation physics. The reduced-rate ion microbeams with energies in the MeV range and sub-micrometer spot-sizes have been used for the investigations of the charge collection efficiency (CCE) in sensitive volumes of segmented radiation detectors in order to measure the spatial distribution and uniformity of CCE in different polarization conditions. This information allows the determination of the charge carrier transport properties in selected substructures of a particular device and to quantify its ability to accurately determine the energy deposited by incident ionizing radiation - two fundamental requirements of any microdosimeter or detector of ionizing radiation. © 2019 Elsevier B.V.
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    Studies of the characteristics of a silicon neutron sensor
    (Institute of Electrical and Electronics Engineers (IEEE), 2009-08-18) Anokhin, I; Zinets, O; Rosenfeld, AB; Lerch, MLF; Yudelev, M; Perevertaylo, VL; Reinhard, MI; Petasecca, M
    Electrical characteristics and neutron dosimetry properties of silicon based p-i-n diodes are presented in support of the applications in the sensors for beam monitoring and medical physics. Both the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of silicon planar p-i-n diode sensors with cylindrical geometry have been theoretically modeled and experimentally measured. The shifts of the forward and reverse diode characteristics of the sensors versus the neutron dose have been obtained. It is shown that the neutron irradiation caused shift of the forward voltage of the p-i-n diodes is proportional to the current at which it is measured in the case of the low level injection or to the square root of the current in the case of the high level injection. The C-V characteristics and the full depletion voltages of the diodes have been estimated and experimentally verified. It is shown that the sensitivity of planar cylindrical structures as neutron sensors can be optimized by the selection of the device geometry and the current at which the measurement is performed. © 2009, Institute of Electrical and Electronics Engineers (IEEE)