Browsing by Author "Pastuovic, Z"

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    Antimicrobial and anti-Inflammatory gallium Implanted ‘trojan Horse’ surfaces for implantable devices
    (Australian Nuclear Science and Technology Organisation, 2021-11-23) Divakarla, SK; Das, T; Chatterjee, C; Ionescu, M; Pastuovic, Z; Jang, JH; Alkhoury, H; Loppnow, H; Yamaguchi, S; Groth, T; Chrzanowski, W
    A rapidly aging population, high incidence of osteoporosis and trauma-related fractures, and better health care access explain rapid surge in utilisation of orthopedic implantable devices. Unfortunately, many implants fail without strategies that synergistically prevent infections and enhance the implant’s integration with host tissues. Here, we propose a solution that builds on our pioneering work on gallium (Ga)-enhanced biomaterials, which show exceptional antimicrobial activity, and combined it with defensin (De, hBD-1), which has potent anti-microbial activity in vivo as part of the innate immune system. Our aim was to simultaneously impart antimicrobial activity and anti-inflammatory properties to polymer-based implantable devices through the modification of the surfaces with Ga ions and immobilisation of De. Poly-lactic acid (PLA) films were modified using Ga implantation using the Surface Engineering Beamline of the 6MV SIRIUS tandem accelerator at ANSTO Australia, and subsequently functionalised with De. Ga ion implantation increased surface roughness and increased stiffness of treated PLA surfaces and led to the reduction in foreign body giant cell formation and expression of pro-inflammatory cytokine IL-1β. Ga implantation and defensin immobilization both independently and synergistically introduced antimicrobial activity to the surfaces, significantly reducing total live biomass. We demonstrated, for the first time, that antimicrobial effects of De were enhanced by its surface immobilization. Cumulatively, the Ga-De surfaces were able to kill bacteria and reduce inflammation in comparison to the untreated control. These innovative surfaces have the potential to prevent biofilm formation without inducing cellular toxicity or inflammation, which is essential in enhancing integration of implantable devices with host tissues and hence, ensure their longevity. © The Authors
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    Application of an SOI microdosimeter for monitoring of neutrons in various mixed radiation field environments
    (Institute of Electrical and Electronics Engineers (IEEE), 2022-03-01) Pan, VA; Vohradsky, J; James, B; Pagani, F; Chartier, L; Debrot, E; Pastuovic, Z; Cutajar, D; Poder, J; Nancarrow, M; Pereloma, E; Bolst, D; Lee, SH; Inaniwa, T; Safavi-Naeini, M; Prokopovich, DA; Guatelli, S; Petasecca, M; Lerch, MLF; Povoli, M; Kok, A; Tran, LT; Rosenfeld, AB
    Radiation monitoring in space radiation is complex due to galactic cosmic rays (GCRs), solar particle events (SPEs), and albedo particles. Thermal neutrons are an important component in the Moon radiation albedo field which can cause single event upset (SEU) in electronics when they interact with the 10 B present in electronic components. In this work, we studied an application of silicon on insulator (SOI) microdosimeters for neutron monitoring in various mixed radiation field environments. A 10- μm SOI microdosimeter was utilized in conjunction with a 10 B 4 C thin-film converter to successfully measure the thermal neutron contribution out of field of a therapeutic proton beam as well as an 18-MV X-ray linear accelerator (LINAC). The microdosimeter was placed downstream of the Bragg peak (BP) as well as laterally out of field of the proton beam and at two positions along the treatment couch of the 18-MV LINAC. It was demonstrated that the 10- μm SOI microdosimeter with 10 B 4 C converter is suitable for detection of thermal neutrons with excellent discrimination of gamma, fast and thermal neutron components in the presence of a gamma-neutron pulsed field of an 18-MV LINAC. To reduce the gamma contribution and further improve detection of neutrons in mixed radiation fields, a new 2 μm Mushroom-planar microdosimeter was fabricated and characterized in detail using an ion beam induced charge collection (IBIC) technique with 1.78 MeV He2+ ions. It was demonstrated that this 2 μm SOI microdosimeter can be operated in a passive mode. The SOI microdosimeter with the 10 B 4 C converter can be recommended for the detection of thermal neutrons for SEU prediction in the mixed gamma-neutron fields during space missions, especially for the Moon mission.© Copyright 2025 IEEE
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    The Centre for Accelerator Science at ANSTO
    (International Atomic Energy Agency, 2014-01-14) Hotchkis, MAC; Child, DP; Cohen, DD; Dodson, JR; Fink, D; Fujioka, T; Garton, DB; Hua, Q; Ionescu, M; Jacobsen, GE; Levchenko, VA; Mifsud, C; Pastuovic, Z; Siegele, R; Smith, AM; Wilcken, KM; Williams, AG
    In 2009, the Federal government provided funding of $25m to ANSTO through the Education Investment Fund, to build state-of-the-art applied accelerator science facilities, with the primary aim of providing world-leading accelerator mass spectrometry (AMS) and ion beam analysis (IBA) facilities. New buildings are now under construction and Building plans are now well advanced, and two new accelerators are on order with National Electrostatics Corporation, USA. The 1MV AMS accelerator system is designed with the capability to perform high efficiency, high precision AMS analysis across the full mass range. Large beam-optical acceptance will ensure high quality and high throughput radiocarbon measurements. High mass resolution analyzers, at low and high energy, coupled to a novel fast isotope switching system, will enable high quality analysis of actinide radioisotopes. The 6MV tandem accelerator will be instrumented with a wide range of AMS, IBA and ion irradiation facilities. The three ion sources include hydrogen and helium sources, and a MCSNICS sputter source for solid materials. The AMS facility has end stations for (i) a gasabsorber detector for 10Be analysis, (ii) a time-of-flight detector, (iii) a gas-filled magnet and(iv) a general use ionization detector suited to 36Cl and other analyses. Initially, there will be four IBA beamlines, including a new ion beam microprobe currently on order with Oxford Microbeams. The other beamlines will include an on-line ion implanter, nuclear reaction analysis and elastic recoil detection analysis facilities. The beam hall layout allows for future expansion, including the possibility of porting the beam to the existing ANTARES beam hall for simultaneous irradiation experiments.Two buildings are currently under construction, one for the new accelerators and the other for new chemistry laboratories for AMS and mass spectrometry facilities. The AMS chemistry labs are planned in two stages, with the new radiocarbon labs to come in the second phase of work.
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    Characterisation and evaluation of a PNP strip detector for synchrotron microbeam radiation therapy
    (IOP Publishing, 2018-06-21) Davis, JA; Paino, JR; Dipuglia, A; Cameron, M; Siegele, R; Pastuovic, Z; Petasecca, M; Perevertaylo, VL; Rosenfeld, AB; Lerch, MLF
    The Quality Assurance requirements of detectors for Synchrotron Micro-beam Radiation Therapy are such that there are limited commercial systems available. The high intensity and spatial fractionation of synchrotron microbeams requires detectors be radiation hard and capable of measuring high dose gradients with high spatial resolution sensitivity. Silicon single strip detectors are a promising candidate for such applications. The PNP strip detector is an alternative design of an already proven technology and is assessed on its contextual viability. In this study, the electrical and charge collection efficiency properties of the device are characterised. In addition, a dedicated TCAD model is used to support ion beam induced charge measurements to determine the spatial resolution of the detector. Lastly, the detector was used to measure the full width half maximum and peak to valley dose ratio for microbeams with only a slight over response. With the exception of radiation hardness the PNP detector is a promising candidate for quality assurance in microbeam radiation therapy. Copyright 2024 IOP Publishing
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    Characterisation of anthropogenic radioactive particles from former weapon test sites in Australia
    (South Pacific Environmental Radioactivity Association, 2018-11-06) Young, EL; Johansen, MP; Child, DP; Hotchkis, MAC; Howell, NR; Pastuovic, Z; Howard, DL; Palmer, T; Davis, J
    Former nuclear test sites on Australian territories such as those at Maralinga and the Montebello islands have been remediated to varying extents but wide-spread radioactivity still remains. Fission and neutron-activation products at the test sites have been decaying over time but long-lived radioisotopes such as uranium and plutonium persist within the environment, predominantly in the form of discrete particles. These particles vary widely in composition depending upon the detonation characteristics and local geology, and are widely dispersed around each site. Radioactive particles are the dominant form of radionuclides at the former test sites and the future distribution of radioactive contaminants in the environment at these sites is largely dependent upon their fate and behaviour. The weathering of particles in the environment and the potential release of the radioactivity they contain is influenced by a range of factors including particle morphology, elemental composition and chemical form, and the prevailing environmental conditions. Radioactive particles have been isolated from soils and sediments from Australian test sites and characterised using photostimulated luminescence (PSL)-autoradiography, scanning electron microscopy energy dispersive X-ray spectroscopy (SEM-EDS), Synchrotron X-ray fluorescence microscopy (XFM) and particle-induced X-ray emission (PIXE). The characteristics of the particles and potential implications for their long term fate will be discussed in the context of the techniques applied and the environments in which the particles were found.
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    Characterization of MOSFET sensors for dosimetry in alpha particle therapy
    (Australian Nuclear Science and Technology Organisation, 2021-11-24) Su, FY; Biasi, G; Tran, LT; Pan, VA; Hill, D; Lielkajis, M; Cutajar, D; Petasecca, M; Lerch, MLF; Pastuovic, Z; Poder, J; Joseph, B; Jackson, M; Anatoly, RB
    Alpha particle therapy, such as diffusing alpha-emitters radiation therapy (DaRT) and targeted alpha-particle therapy (TAT), exploits the short-range and high linear energy transfer (LET) of alpha particles to destroy cancer cells locally with minimal damage to surrounding healthy cells. Dosimetry for DaRT and TAT is challenging, as their radiation sources produce mixed radiation fields of α particles, β particles, and γ rays. There is currently no dosimeter for real-time in vivo dosimetry of DaRT or TAT. Metal-oxide-semiconductor field-effect transistors (MOSFETs) have features that are ideal for this scenario. Owing to their compactness, MOSFETs can fit into fine-gauge needle applicators, such as those used to carry the radioactive seeds into the tumour. This study characterized the response of MOSFETs designed at the Centre for Medical and Ra diation Physics, University of Wollongong. MOSFETs with three different gate oxide thicknesses (0.55 µm, 0.68 µm, and 1.0 µm) were irradiated with a 5.5 MeV mono-energetic helium ion beam (He2+) using SIRIUS 6MV accelerator tandem at the Australian Nuclear Science and Technology Organization (ANSTO) and an Americium-241 (241Am) source. The sensitivity and dose-response linearity were assessed by analysing the spatially resolved median energy maps of each device and their corresponding voltage shift values. The re sults showed that the response of the MOSFET detectors was linear with alpha dose up to 25.68 Gy. Also, it was found that a gate bias of between 15 V and 60 V would optimize the sensitivity of the detectors to alpha particles with energy of 5.5 MeV. © The Authors.
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    Charge collection efficiency degradation induced by MeV ions in semiconductor devices: model and experiment
    (Elsvier, 2016-01-01) Vittone, E; Pastuovic, Z; Breese, M; Garcia Lopez, J; Jakšić, M; Raisanen, J; Siegele, R; Simon, A; Vizkelethy, G
    This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials. © 2016 Elsevier B.V.
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    Charge collection in SOI microdosimeters and their radiation hardness
    (IEEE, 2023-02-03) Pan, VA; Tran, LT; Pastuovic, Z; Hill, D; Williams, JB; Kok, A; Povoli, M; Pogossov, A; Peracchi, S; Boardman, DA; Davis, J; Guatelli, S; Petasecca, M; Lerch, MLF; Rosenfeld, AB
    A new batch of microdosimeters has been extensively studied for their charge collection efficiency (CCE) properties, as well as their radiation hardness for medical, space and accident applications. Silicon-on-insulator (SOI) microdosimeters with an active layer thickness of 10, 20 and 50 μm have been investigated and were characterized with a 24 MeV carbon ion beam as well as a Co-60 gamma source. A negative pulse was observed in addition to the positive pulses generated within the sensitive volumes (SVs) by incident ions which led to undesirable low energy events in the SOI microdosimeters response. To study this phenomenon, the microdosimeters were irradiated with gamma radiation from a Co-60 source with a total dose of 3 and 10 Mrad(Si). It was determined that the negative pulse was originating from the support wafer due to the displacement current phenomenon. Irradiation with the Co-60 source led to a disappearing of the negative pulse due to an increase in recombination within the support wafer while almost no changes in CCE were observed. A radiation hardness study was also performed on the 50 μm SOI microdosimeter with 16 SVs being irradiated with a fluence of ~ 10 8 12 C ions/cm 2 . A CCE deficit of approximately 2% was observed at an operation bias of 10V within the SVs. The findings of this work demonstrate that the SOI microdosimeters can be utilized in space and medical applications as they can handle typical levels of dose encountered in these applications. Additionally, evidence for SOI microdosimeter fabrication standards in terms of support wafer resistivity and buried oxide (BOX) thickness is shown. © 2023 IEEE
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    Comparison of in vivo binding properties of the 18-kDa translocator protein (TSPO) ligands [18F]PBR102 and [18F]PBR111 in a model of excitotoxin-induced neuroinflammation
    (Springer Link, 2015-01) Callaghan, PD; Wimberley, CA; Rahardjo, GL; Berghofer, PJ; Pham, TQ; Jackson, TW; Zahra, D; Bourdier, T; Wyatt, N; Greguric, ID; Howell, NR; Siegele, R; Pastuovic, Z; Mattner, F; Loc'h, C; Grégoire, MC; Katsifis, A
    The in vivo binding parameters of the novel imidazopyridine TSPO ligand [18F]PBR102 were assessed and compared with those of [18F]PBR111 in a rodent model of neuroinflammation. The validity of the key assumptions of the simplified reference tissue model (SRTM) for estimation of binding potential (BP) was determined, with validation against a two-tissue compartment model (2TC). Methods Acute neuroinflammation was assessed 7 days after unilateral stereotaxic administration of (R,S)-α-amino-3-hydroxy-5-methyl-4-isoxazolopropionique (AMPA) in anaesthetized adult Wistar rats. Anaesthetized rats were implanted with a femoral arterial cannula then injected with a low mass of [18F]PBR102 or [18F]PBR111 and dynamic images were acquired over 60 min using an INVEON PET/CT camera. Another population of rats underwent the same PET protocol after pretreatment with a presaturating mass of the same unlabelled tracer (1 mg/kg) to assess the validity of the reference region for SRTM analysis. Arterial blood was sampled during imaging, allowing pharmacokinetic determination of radiotracer concentrations. Plasma activity concentration–time curves were corrected for unchanged tracer based on metabolic characterization experiments in a separate cohort of Wistar rats. The stability of neuroinflammation in both imaging cohorts was assessed by [125I] CLINDE TSPO quantitative autoradiography, OX42/GFAP immunohistochemistry, Fluoro-Jade C histology, and elemental mapping using microparticle-induced x-ray emission spectroscopy. The BP of each ligand were assessed in the two cohorts of lesioned animals using both SRTM and a 2TC with arterial parent compound concentration, coupled with the results from the presaturation cohort for comparison and validation of the SRTM. Results The BPs of [18F]PBR102 [18F]PBR111 were equivalent, with improved signal-to-noise ratio and sensitivity compared with [11C]PK11195. The presaturation study showed differences in the volume of distribution between the ipsilateral striatum and the striatum contralateral to the injury (0.7) indicating that an assumption of the SRTM was not met. The modelling indicated that the BPs were consistent for both ligands. Between the SRTM and 2TC model, the BPs were highly correlated, but there was a bias in BP. Conclusion [18F]PBR102 and [18F]PBR111 have equivalent binding properties in vivo, displaying significantly greater BPs with lower signal-to-noise ratio than [11C]PK11195. While an assumption of the SRTM was not met, this modelling approach was validated against 2TC modelling for both ligands, facilitating future use in longitudinal PET imaging of neuroinflammation.© 2014, Springer Nature
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    Creating thin magnetic layers at the surface of Sb2Te3 topological insulators using a low-energy chromium ion beam
    (AIP Publishing, 2020-05-11) Cortie, DL; Zhao, WY; Yue, Z; Li, Z; Bake, A; Marenych, O; Pastuovic, Z; Nancarrow, M; Zhang, ZM; Qi, DC; Evans, PJ; Mitchell, DRG; Wang, XL
    The surfaces of Sb2Te3 topological insulator crystals were implanted using a 40 keV chromium ion beam. To facilitate uniform doping, the Sb2Te3 was passivated with a thin TiO2 film before the implantation step. The resulting chemical structure was studied using atomic-resolution transmission electron microscopy. A fluence of 7 × 1015 ions/cm2 at 40 keV lead to amorphization of the Sb2Te3 surface, with chromium predominantly incorporated in the amorphous layer. Heating to 200 °C caused the amorphous region to recrystallize and led to the formation of a thin chromium-rich interfacial layer. Near-edge x-ray absorption spectroscopy indicates a uniform valence state of Cr3+ throughout, with no evidence of metallic clustering. High-temperature superparamagnetic behavior was detected up to 300 K, with an increased magnetic moment below 50 K. © 2020 Author(s).
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    Creation of microstructures using heavy ion beam lithography
    (Elsevier, 2011-10-15) Varasanec, M; Bogdanović-Radović, I; Pastuovic, Z; Jakšić, M
    In this work, three-dimensional (3D) structures were produced in PMMA and CR-39 polymer resists using a carbon ion microbeam. To investigate possible advantages of heavy ions compared to the well-established proton beam lithography, the same resist materials were also irradiated with protons that had a range in the materials studied here similar to that of carbon ions. The microstructures produced in different resists were analysed after chemical etching. The quality of the bottom and side walls of the structures produced by protons and carbon ions were compared using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results showed that, for the resist materials tested, lithographic structures made with the 8 MeV carbon beam had more rough lateral and bottom surfaces compared to those made with 0.6 MeV proton beam lithography. (C) 2011 Elsevier B.V.
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    Cultural heritage project at Australian Nuclear Science and Technology Organisation (ANSTO)
    (Springer Nature, 2022-01-25) Salvemini, F; White, R; Levchenko, VA; Smith, AM; Pastuovic, Z; Stopic, A; Luzin, V; Tobin, MJ; Puskar, L; Howard, DL; Davis, J; Avdeev, M; Gatenby, S; Kim, MJ; Grazzi, F; Sheedy, K; Olsen, SR; Raymond, CA; Lord, C; Richards, C; Bevitt, JJ; Popelka-Filcoff, RS; Lenehan, CE; Ives, S; Dredge, P; Yip, A; Brookhouse, MT; Austin, AG
    The Australian Nuclear Science and Technology Organization (ANSTO) is the home of Australia’s most significant landmark and national infrastructure for research. ANSTO operates one of the world’s most modern nuclear research reactors, OPAL; a comprehensive suite of neutron beam instruments; the Australian Synchrotron; the Electron Microscope Facility; and the Center for Accelerator Science. Over the years, the suite of nuclear methods available across ANSTO’s campuses has been increasingly applied to study a wide range of heritage materials. Since 2015 the strategic research project on cultural heritage was initiated in order to promote access to ANSTO’s capabilities and expertise, unique in the region, by cultural institution and researchers. This chapter offers a compendium of ANSTO nuclear capabilities most frequently applied to cultural heritage research. A series of innovative, interdisciplinary, and multi-technique studies conducted in close collaboration with Australian museums, institutions, and universities is also showcased. It includes research on dating Aboriginal Australian rock art and fingerprinting the sources of ochre pigments; rediscovering the technological knowledge in the making of early coinage and ancient weapons; virtually unwrapping the content of votive mummies from ancient Egypt; and investigating and restoring the original layer of a painting that can be explored by the museum audience in a novel type of exhibition based on an immersive, interactive, and virtual environment. © 2022 Springer Nature Switzerland AG
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    Developing electronic devices capable of withstanding harsh radiation
    (2013-05-13) Pastuovic, Z; Vittone, E; Siegele, R; Capan, I; Vizkelethy, G; Cohen, DD; Jakšić, M
    Studies performed by Zeljko Pastuovic at ANSTO’s microprobe facility, in collaboration with a team of international researchers, are helping to understand, model and predict the detrimental influence of ionising radiation on semiconducting materials required in millions of electronic devices. The research aims to develop materials and devices that are able to better withstand the damaging effects of high energy particles present in harsh radiation environments, such as solar cells, and power satellites in space, as well as materials used in high-energy physics and accelerators. These studies will help semiconductor, aerospace and other industries to better understand and extend the life of electronic devices.
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    Engineering silicon carbide for enhanced borders and ports security
    (Springer, 2019-09-17) Capan, I; Brodar, T; Pastuovic, Z; Bernat, R; Coutinho, J; Radulović, V; Snoj, L; Torres, V; Sarbutt, A; Ohshima, T.; Ereš, Z; Ambrožič, K; Yamazaki, Y; Makino, T
    Developing new state-of-the-art, low-cost and radiation hard detectors is an extremely difficult challenge which can be tackled only by a multisciplinary group of scientists and engineers from various fields having access to different infrastructure. In our project, Engineering silicon carbide for enhanced borders and ports security (-SiCure) funded by the NATO SPS programme [project number G5215] five partners from Australia (ANSTO), Croatia (RBI), Japan (QST), Portugal (UA) and Slovenia (JSI) have created a team whose main goal is to develop a SiC detector of special nuclear materials. © 2023 Springer Nature Switzerland AG
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    Flexible polymer X‑ray detectors with non-fullerene acceptors for enhanced stability: Toward printable tissue equivalent devices for medical applications
    (American Chemical Society (ACS), 2021-12-08) Large, MJ; Posar, JA; Mozer, AJ; Nattestad, A; Alnaghy, S; Carolan, M; Sellin, PJ; Davies, J; Pastuovic, Z; Lerch, MLF; Guatelli, S; Rosenfeld, AB; Griffith, MJ; Petasecca, M
    There is growing interest in the development of novel materials and devices capable of ionizing radiation detection for medical applications. Organic semiconductors are promising candidates to meet the demands of modern detectors, such as low manufacturing costs, mechanical flexibility, and a response to radiation equivalent to human tissue. However, organic semiconductors have typically been employed in applications that convert low energy photons into high current densities, for example, solar cells and LEDs, and thus existing design rules must be re-explored for ionizing radiation detection where high energy photons are converted into typically much lower current densities. In this work, we report the optoelectronic and X-ray dosimetric response of a tissue equivalent organic photodetector fabricated with solution-based inks prepared from polymer donor poly(3-hexylthiophene) (P3HT) blended with either a non-fullerene acceptor (5Z,5′Z)-5,5′-((7,7′-(4,4,9,9-tetraoctyl-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-2,7-diyl)bis(benzo[c][1,2,5]thiadiazole-7,4-diyl))bis(methanylylidene))bis(3-ethyl-2-thioxothiazolidin-4-one) (o-IDTBR) or a fullerene acceptor, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Indirect detection of X-rays was achieved via coupling of organic photodiodes with a plastic scintillator. Both detectors displayed an excellent response linearity with dose, with sensitivities to 6 MV photons of 263.4 ± 0.6 and 114.2 ± 0.7 pC/cGy recorded for P3HT:PCBM and P3HT:o-IDTBR detectors, respectively. Both detectors also exhibited a fast temporal response, able to resolve individual 3.6 μs pulses from the linear accelerator. Energy dependence measurements highlighted that the photodetectors were highly tissue equivalent, though an under-response in devices compared to water by up to a factor of 2.3 was found for photon energies of 30-200 keV due to the response of the plastic scintillator. The P3HT:o-IDTBR device exhibited a higher stability to radiation, showing just an 18.4% reduction in performance when exposed to radiation doses of up to 10 kGy. The reported devices provide a successful demonstration of stable, printable, flexible, and tissue-equivalent radiation detectors with energy dependence similar to other scintillator-based detectors used in radiotherapy. © 2021 American Chemical Society.
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    Focused ion beam fabrication and IBIC characterisation of a diamond detector with buried electrodes
    (Elsevier, 2011-10-15) Olivero, P; Forneris, J; Jakšić, M; Pastuovic, Z; Picollo, F; Skukan, N; Vittone, E
    This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism. (C) 2011 Elsevier B.V. All rights reserved.
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    Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon
    (Elsevier, 2014-08-01) Pastuovic, Z; Capan, I; Siegele, R; Jacimovic, R; Forneris, J; Cohen, DD; Vittone, E
    Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after implantation of 8.3 MeV 28Si3+ ions at room temperature. For this study, Schottky diodes prepared from n-type Czohralski-grown silicon wafers have been implanted in the single ion regime up to fluence value of 1 × 1010 cm−2 utilizing the scanning focused ion microbeam as implantation tool and the Ion Beam Induced Current (IBIC) technique for ion counting. Differential DLTS analysis of the vacancy-rich region in self-implanted silicon reveals a formation of the broad vacancy-related defect state(s) at Ec −0.4 eV. Direct measurements of the electron capture kinetics associated with this trap at Ec −0.4 eV, prior to any annealing do not show an exponential behaviour typical for the simple point-like defects. The logarithmic capture kinetics is in accordance with the theory of majority carrier capture at extended or cluster-related defects. We have detected formation of two deep electron traps at Ec −0.56 eV and Ec −0.61 eV in the interstitial-rich region of the self-implanted silicon, before any annealing. No DLTS signal originating from vacancy-oxygen trap at Ec −0.17 eV, present in the sample irradiated with 0.8 MeV neutrons, has been recorded in the self-implanted sample. © 2014, Elsevier B.V.
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    Heavy ion PIXE cross sections in Ti, Zn, Nb, Ru and Ta for 4.8–30.0 MeV oxygen and 3.0–12.0 MeV lithium beams
    (Elsevier B. V., 2019-07-01) Siegele, R; Cohen, DD; Pastuovic, Z
    Heavy ion Particle Induced X-ray Emission (PIXE) spectroscopy offers a number of advantages over standard proton PIXE, such as higher yields and therefore higher sensitivity. However, in order to be able to use heavy ion PIXE more detailed measurements of the ionisation and X-ray cross sections for heavy ions are required. This issue was recognised by one of the Coordinated Research Projects (CRP) of the IAEA on MeV Secondary Ion Mass Spectrometry (SIMS). ANSTO took part in this CRP and we measured X-ray production cross sections on a range of samples for oxygen and lithium beam in the energy range of 4.8–30 MeV and 3–12 MeV, respectively. Here we report on these X-ray production cross section measurements and compare the results with theoretical models. Further energy shifts of the characteristic X-ray lines for the different ion-target combinations are presented and discussed. Crown Copyright © 2018 Published by Elsevier B.V.
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    IBIC microscopy – the powerful tool for testing micron – sized sensitive volumes in segmented radiation detectors used in synchrotron microbeam radiation and hadron therapies
    (Elsevier B. V., 2019-11-01) Pastuovic, Z; Davis, J; Tran, LT; Paino, JR; Dipuglia, A; James, B; Povoli, M; Kok, A; Perevertaylo, VL; Siegele, R; Prokopovich, DA; Lerch, MLF; Petasecca, M; Rosenfeld, AB; Cohen, DD
    Ion Beam Induced Charge (IBIC) microscopy performed using highly tuned microbeams of accelerated ions with energies in the MeV range is the powerful tool for analysis of charge carrier transport properties in semiconductor devices based on semiconductor hetero-junction, metal-on-semiconductor and semiconductor-on-insulator configurations. Here we present two cases of recent applications of the IBIC microscopy in the field of medical radiation physics. The reduced-rate ion microbeams with energies in the MeV range and sub-micrometer spot-sizes have been used for the investigations of the charge collection efficiency (CCE) in sensitive volumes of segmented radiation detectors in order to measure the spatial distribution and uniformity of CCE in different polarization conditions. This information allows the determination of the charge carrier transport properties in selected substructures of a particular device and to quantify its ability to accurately determine the energy deposited by incident ionizing radiation - two fundamental requirements of any microdosimeter or detector of ionizing radiation. © 2019 Elsevier B.V.
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    Increased phase coherence length in a porous topological insulator
    (American Physical Society (APS), 2023-06-15) Nguyen, A; Akhgar, G; Cortie, DL; Bake, A; Pastuovic, Z; Zhao, W; Liu, C; Chen, YH; Suzuki, K; Fuhrer, MS; Culcer, D; Hamilton, AR; Edmonds, MT; Karel, J
    The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surfacelike. Weak antilocalization was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics. ©2023 American Physical Society