Browsing by Author "Koshy, P"

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    Mo-doped, Cr-doped, and Mo–Cr codoped TiO2 thin-film photocatalysts by comparative sol-gel spin coating and ion implantation
    (Elsevier, 2021-02-18) Chen, A; Chen, WF; Majidi, T; Pudadera, B; Atanacio, AJ; Manohar, M; Sheppard, LR; Liu, R; Sorrell, CC; Koshy, P
    Uniformly codoped anatase TiO2 thin films of varying (equal) Mo and Cr concentrations (≤1.00 mol% for each dopant) were fabricated using sol-gel spin coating and deposited on fused silica substrates. All films were annealed at 450 °C for 2 h to recrystallise anatase. Undoped anatase films have been subjected to dual ion implantation for the first time, using Mo, Cr, and sequential Mo + Cr at 1 × 1014 atoms/cm2. The films were characterised by GAXRD, AFM, SIMS, XPS, and UV–Vis and the performance was assessed by dye degradation. Despite the volumetric doping by sol-gel and the directional doping by ion implantation, neither method resulted in homogeneous dopant distributions. Both methods caused decreasing crystallinities and associated partial amorphisation. The XPS signal of the uniformly codoped films is dominated by undissolved dopant ions, which is not the case for the ion-implanted films. Increasing Ti valences are attributed to the fully oxidised condition of the Ti4+ ions that diffuse to the surface from Ti vacancy formation compared to the Ti valence of the bulk lattice, which contains Ti3+. Increasing O valence is attributed to the electronegativity of O2−, which is higher than that of Ti4+. Detailed structural mechanisms for the solubility and energetics mechanisms involve the initial formation of Mo and Cr interstitials that fill the two voids adjacent to the central Ti ion in the TiO6 octahedron, followed by integrated solid solubility (ISS) and intervalence/multivalence charge transfer (IVCT/MVCT). The sequential order of the last two is reversed for the two different doping methods. These two effects are likely to be the source of synergy, if any, between the two dopant ions. The photocatalytic performances of the uniformly codoped films are relatively poor and correlate well with the band gap (Eg). The performances of the ion-implanted films do not correlate with the Eg, where TiO2–Mo performs poorly but TiO2–Cr and TiO2–Mo–Cr outperform the undoped film. These results are interpreted in terms of the competition between the effects of Mo doping, which causes partial amorphisation and/or blockage of active sites, and Cr doping, which may cause Mo–Cr synergism, Cr-based heterojunction formation, and/or improved charge-carrier separation owing to the surface-deposition nature of ion implantation. © 2021 Hydrogen Energy Publications LLC.
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    Role of oxygen vacancy ordering and channel formation in tuning intercalation pseudocapacitance in Mo single-ion-implanted CeO2–x nanoflakes
    (American Chemical Society, 2021-12-07) Zheng, XR; Mofarah, SS; Cen, A; Cazorla, C; Haque, E; Chen, EY; Atanacio, AJ; Manohar, M; Vutukuri, C; Abraham, JL; Koshy, P; Sorrell, CC
    Metal oxide pseudocapacitors are limited by low electrical and ionic conductivities. The present work integrates defect engineering and architectural design to exhibit, for the first time, intercalation pseudocapacitance in CeO2–x. An engineered chronoamperometric electrochemical deposition is used to synthesize 2D CeO2–x nanoflakes as thin as ∼12 nm. Through simultaneous regulation of intrinsic and extrinsic defect concentrations, charge transfer and charge–discharge kinetics with redox and intercalation capacitances together are optimized, where reduction increases the gravimetric capacitance by 77% to 583 F g–1, exceeding the theoretical capacitance (562 F g–1). Mo ion implantation and reduction processes increase the specific capacitance by 133%, while the capacitance retention increases from 89 to 95%. The role of ion-implanted Mo6+ is critical through its interstitial solid solubility, which is not to alter the energy band diagram but to facilitate the generation of electrons and to establish the midgap states for color centers, which facilitate electron transfer across the band gap, thus enhancing n-type semiconductivity. Critically, density functional theory simulations reveal, for the first time, that the reduction causes the formation of ordered oxygen vacancies that provide an atomic channel for ion intercalation. These channels enable intercalation pseudocapacitance but also increase electrical and ionic conductivities. In addition, the associated increased active site density enhances the redox such that the 10% of the Ce3+ available for redox (surface only) increases to 35% by oxygen vacancy channels. These findings are critical for any oxide system used for energy storage systems, as they offer both architectural design and structural engineering of materials to maximize the capacitance performance by achieving accumulative surface redox and intercalation-based redox reactions during the charge/discharge process. © 2021 American Chemical Society