Effect of indium segregation on the surface versus bulk chemistry for indium-doped TiO2

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dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorBak, Ten_AU
dc.contributor.authorNowotny, Jen_AU
dc.date.accessioned2020-08-28T05:09:59Zen_AU
dc.date.available2020-08-28T05:09:59Zen_AU
dc.date.issued2012-11-12en_AU
dc.date.statistics2020-08-04en_AU
dc.description.abstractThis work reports the effect of indium segregation on the surface versus bulk composition of indium (In)-doped TiO2. The studies are performed using proton-induced X-ray emission (PIXE), secondary-ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectroscopy (RBS). The results of XPS analysis indicate that annealing of In-doped TiO2 containing 0.3 atom % In at 1273 K in the gas phase of controlled oxygen activity [p(O2) = 75 kPa and 10 Pa] results in a surface enrichment of 2.95 and 2.61 atom % In, respectively. The obtained segregation data are considered in terms of the transport of indium ions from its titanium sites in the bulk phase to the surface where these ions are incorporated into interstitial sites. The effect of oxygen activity on the segregation-induced surface enrichment is considered in terms of the formation of a low-dimensional surface structure and a sublayer, which are charged negatively. The latter is formed as a result of strong interactions between titanium vacancies and interstitial indium ions, leading to the formation of defect complexes. The data obtained in this work may be used for engineering of TiO2-based semiconductors with enhanced performance in solar energy conversion. © 2012 American Chemical Societyen_AU
dc.identifier.citationAtanacio, A. J., Bak, T., & Nowotny, J. (2012). Effect of indium segregation on the surface versus bulk chemistry for indium-doped TiO2. ACS Applied Materials & Interfaces, 4(12), 6626-6634. doi:10.1021/am301729zen_AU
dc.identifier.govdoc9864en_AU
dc.identifier.issn1944-8244en_AU
dc.identifier.issue12en_AU
dc.identifier.journaltitleACS Applied Materials & Interfacesen_AU
dc.identifier.pagination6626-6634en_AU
dc.identifier.urihttps://pubs.acs.org/doi/pdf/10.1021/am301729zen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/9723en_AU
dc.identifier.volume4en_AU
dc.language.isoenen_AU
dc.publisherAmerican Chemical Societyen_AU
dc.subjectTitaniumen_AU
dc.subjectRutileen_AU
dc.subjectSegregationen_AU
dc.subjectIndiumen_AU
dc.subjectPIXE analysisen_AU
dc.subjectMass spectroscopyen_AU
dc.subjectX-ray photoelectron spectroscopyen_AU
dc.subjectRutherford backscattering spectroscopyen_AU
dc.titleEffect of indium segregation on the surface versus bulk chemistry for indium-doped TiO2en_AU
dc.typeJournal Articleen_AU
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