Simulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals

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dc.contributor.authorShahbazi, Men_AU
dc.contributor.authorWang, XLen_AU
dc.contributor.authorIonescu, Men_AU
dc.contributor.authorGhorbani, SRen_AU
dc.contributor.authorDou, SXen_AU
dc.contributor.authorChoi, KYen_AU
dc.date.accessioned2020-03-26T00:20:16Zen_AU
dc.date.available2020-03-26T00:20:16Zen_AU
dc.date.issued2014-07-01en_AU
dc.date.statistics2020-03-20en_AU
dc.description.abstractIn this work, we analyse the influence of C4+ irradiation with ion flounce of 3 × 1012 up to 2.3 × 1015 ion·cm−2 on significant enhancement of the critical current density, Jc , in BaFe1.9Ni0.1As2 single crystals. Jc was increased from 0.61 × 105 up to 0.94 × 105 A/cm2 at T = 10 K and H = 0.5 T. BaFe1.9Ni0.1As2 single crystals with and without the C4+-irradiation were characterized by magneto-transport and magnetic measurements up to 13 T over a wide range of temperatures below and above the superconducting critical temperature, Tc . It is found that the C4+-irradiation causes little change in Tc , but it can greatly enhance the in-field critical current density by a factor of up to 1.5. Higher dose of C4+ ions, causes further Jc enhancement at T=10 K. furthermore, flux jumping completely disappeared at T=2 K after second C4+-irradiation. Our Monte Carlo simulation results show that all the C4+ ions end up in a well defined layer, causing extended defects and vacancies at the layer, but few defects elsewhere on the irradiation paths. Furthermore, the normal state resistivity is enhanced by the light C4+ irradiation, while the upper critical field, H c2, the irreversibility field, H irr, and Tc were affected very little. © 2014 American Scientific Publisheren_AU
dc.identifier.citationShahbazi, M., Wang, X. L., Ionescu, M., Ghorbani, S. R., Dou, S. X., & Choi, K. Y. (2014). Simulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals. Science of Advanced Materials, 6(7), 1650-1654. doi:10.1166/sam.2014.1937en_AU
dc.identifier.govdoc8990en_AU
dc.identifier.issn1947-2943en_AU
dc.identifier.issue7en_AU
dc.identifier.journaltitleScience of Advanced Materialsen_AU
dc.identifier.pagination1650-1654en_AU
dc.identifier.urihttps://doi.org/10.1166/sam.2014.1937en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/9246en_AU
dc.identifier.volume6en_AU
dc.language.isoenen_AU
dc.publisherAmerican Scientific Publishersen_AU
dc.subjectIrradiationen_AU
dc.subjectCurrent densityen_AU
dc.subjectCrystalsen_AU
dc.subjectDensityen_AU
dc.subjectIonsen_AU
dc.subjectTemperature rangeen_AU
dc.titleSimulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystalsen_AU
dc.typeJournal Articleen_AU
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