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|Title: ||Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon|
|Authors: ||Pastuovic, Z|
|Issue Date: ||1-Aug-2014|
|Citation: ||Pastuovic, Z., Capan, I., Siegele, R., Jacimovic, R., Forneris, J., Cohen, D. D., & Vittone, E. (2014). Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 332, 298-302. doi: http://dx.doi.org/10.1016/j.nimb.2014.02.082|
|Abstract: ||Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after implantation of 8.3 MeV 28Si3+ ions at room temperature. For this study, Schottky diodes prepared from n-type Czohralski-grown silicon wafers have been implanted in the single ion regime up to fluence value of 1 × 1010 cm−2 utilizing the scanning focused ion microbeam as implantation tool and the Ion Beam Induced Current (IBIC) technique for ion counting.
Differential DLTS analysis of the vacancy-rich region in self-implanted silicon reveals a formation of the broad vacancy-related defect state(s) at Ec −0.4 eV. Direct measurements of the electron capture kinetics associated with this trap at Ec −0.4 eV, prior to any annealing do not show an exponential behaviour typical for the simple point-like defects. The logarithmic capture kinetics is in accordance with the theory of majority carrier capture at extended or cluster-related defects. We have detected formation of two deep electron traps at Ec −0.56 eV and Ec −0.61 eV in the interstitial-rich region of the self-implanted silicon, before any annealing. No DLTS signal originating from vacancy-oxygen trap at Ec −0.17 eV, present in the sample irradiated with 0.8 MeV neutrons, has been recorded in the self-implanted sample. © 2014, Elsevier B.V.|
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