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Title: Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon.
Authors: Pastuovic, Z
Capan, I
Siegele, R
Jacimovic, R
Forneris, J
Cohen, D D
Vittone, E
Keywords: ION PAIRS
Issue Date: 1-Aug-2014
Citation: Pastuovic, Z., Capan, I., Siegele, R., Jacimovic, R., Forneris, J., Cohen, D. D., & Vittone, E. (2014). Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon. Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms, 332, 298-302.
Abstract: Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after implantation of 8.3 MeV Si-28(3+) ions at room temperature. For this study, Schottky diodes prepared from n-type Czohralski-grown silicon wafers have been implanted in the single ion regime up to fluence value of 1 x 10(10) cm(-2) utilizing the scanning focused ion microbeam as implantation tool and the Ion Beam Induced Current (IBIC) technique for ion counting. Differential DLTS analysis of the vacancy-rich region in self-implanted silicon reveals a formation of the broad vacancy-related defect state(s) at E-c -0.4 eV. Direct measurements of the electron capture kinetics associated with this trap at E-c -0.4 eV, prior to any annealing do not show an exponential behaviour typical for the simple point-like defects. The logarithmic capture kinetics is in accordance with the theory of majority carrier capture at extended or cluster-related defects. We have detected formation of two deep electron traps at E-c -0.56 eV and E-c -0.61 eV in the interstitial-rich region of the self-implanted silicon, before any annealing. No DLTS signal originating from vacancy-oxygen trap at E-c -0.17 eV, present in the sample irradiated with 0.8 MeV neutrons, has been recorded in the self-implanted sample. © 2014, Elsevier Ltd.
ISSN: 0168-583X
Appears in Collections:Journal Articles

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