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Browsing by Author Mo, L

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Issue DateTitleAuthor(s)
Aug-2005Development of activity standard for 90Y microspheres.Mo, L; Avci, B; James, D; Simpson, B; van Wyngaardt, WM; Cessna, JT; Baldock, C
1-Sep-2005Development of an Australian secondary standard for the reference air kerma rate measurement of 125I seeds.Davies, JB; Mo, L; Alexiev, D
1-Aug-2000Digital coincidence counting - initial results.Butcher, KSA; Watt, GC; Alexiev, D; van der Gaast, H; Davies, J; Mo, L; Wyllie, HA; Keightley, JD; Smith, D; Woods, MJ
1-Mar-1996Effect of crucible materials on impurities in LPE-GaAs.Mo, L; Butcher, KSA; Alexiev, D
1-Mar-2010Effect of multiple γ-ray interactions on ionisation quenching corrections in liquid scintillants.Bignell, LJ; Mo, L; Alexiev, D; Hashemi-Nezhad, SR
15-Apr-1996Elemental composition of reactively sputtered indium nitride thin films.Sunil, K; Mo, L; Motlan; Tansley, TL
1-May-2008Evaluation of lead shielding for a gamma-spectroscopy system.Smith, ML; Bignell, LJ; Alexiev, D; Mo, L; Harrison, JJ
11-Oct-2009FASEA: a FPGA acquisition system and software event analysis for liquid scintillation counting.Steele, T; Mo, L; Bignell, L; Smith, M; Alexiev, D
1-Dec-1995Growth of high purity liquid phase epitaxial GaAs in a silica growth system.Butcher, KSA; Mo, L; Alexiev, D; Tansley, TL
15-Mar-2006Influence of rejection of a fraction of the single photoelectron peak in liquid scintillation counting.Mo, L; Cassette, P; Baldock, C
Dec-2008Monte carlo simulation of a Au-198 thin foil: the response of a 4πβ-γ detector.Bignell, LJ; Mo, L; Smith, ML; Alexiev, D; Hashemi-Nezhad, SR
Sep-2002Review of Ge detectors for gamma spectroscopy.Alexiev, D; Reinhard, MI; Mo, L; Rosenfeld, AR; Smith, ML
10-Sep-2009Sensitivity and uncertainty analysis of the simulation of 123I and 54Mn decay in liquid scintillation vials.Bignell, LJ; Mo, L; Smith, ML; Steele, T; Alexiev, D; Hashemi-Nezhad, SR
Feb-2010Sipping test: checking for failure of fuel elements at the Opal Reactor.Smith, ML; Bignell, LJ; Alexiev, D; Mo, L
Oct-1995Surface passivation of liquid phase epitaxial GaAS.Alexiev, D; Butcher, KSA; Mo, L; Edmondson, M
11-Sep-1999Transient conductance technique for characterisation of deep-level defects in highly irradiated detector-grade silicon.Alexiev, D; Reinhard, MI; Mo, L; Rosenfeld, A
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