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ANSTO Publications Online >
Browsing by Author Capan, I
Showing results 1 to 8 of 8
| Issue Date | Title | Author(s) | | 1-Aug-2014 | Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon | Pastuovic, Z; Capan, I; Siegele, R; Jacimovic, R; Forneris, J; Cohen, DD; Vittoned, E |
| 1-Aug-2014 | Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon | Pastuović, Z; Capan, I; Siegele, R; Jacimovic, R; Forneris, J; Cohen, DD; Vittone, E |
| 1-Aug-2014 | Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon. | Pastuovic, Z; Capan, I; Siegele, R; Jacimovic, R; Forneris, J; Cohen, D D; Vittone, E |
| 28-Feb-2011 | Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation | Pastuović, Z; Vittone, E; Capan, I; Jaksic, M |
| 7-Jul-2014 | Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam | Pastuović, Z; Capan, I; Siegele, R; Ohshima, T; Iwamoto, N; Forneris, J; Cohen, D |
| 1-Apr-2015 | Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam | Pastuovic, Z; Capan, I; Cohen, DD; Forneris, J; Iwamoto, N; Ohshima, T; Siegele, R; Hoshino, N; Tsuchida, H |
| 1-Apr-2016 | Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range | Capan, I; Pastuovic, Z; Siegele, R; Jacimovic, R |
| 1-Apr-2016 | Vacancy-related defects in n-type Si implanted with rarefied microbeam of accelerated heavy ions in the MeV range | Capan, I; Pastuovic, Z; Siegele, R; Jacimovic, R |
Showing results 1 to 8 of 8
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