Browsing by Author "Tran, LT"
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- Item3D radiation detectors: charge collection characterisation and applicability of technology for microdosimetry(IEEE Xplore, 2014-08-04) Tran, LT; Prokopovich, DA; Petasecca, M; Lerch, MLF; Kok, A; Summanwar, A; Hansen, T; Via, CD; Reihnard, MI; Rosenfeld, ABA study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma radiation on their charge collection efficiency was also investigated. A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.© 2014, IEEE.
- Item3D sensitive volume microdosimeter with improved tissue equivalency: charge collection study and its application in 12C ion therapy(IOP Publishing, 2018-02-06) James, B; Tran, LT; Bolst, D; Prokopovich, DA; Reinhard, MI; Lerch, MLF; Petasecca, M; Guatelli, S; Povoli, M; Kok, A; Matsufuji, N; Jackson, M; Rosenfeld, ABThis research focuses on the characterisation of a new 3D sensitive volume (SV) microdosimeter covered with polyimide – a material which closely mimics human tissue. The electrical and charge collection properties of the device were investigated and its application in 12C ion therapy were studied. Charge collection studies revealed uniform charge collection and no cross talk between adjacent SVs. To study the microdosimetric response in 12C ion therapy, the new polyimide mushroom microdosimeter were placed at various positions along the central axis of a 290 MeV/u 12C ion spread out Bragg peak (SOBP) at the Heavy Ion Medical Accelerator in Chiba (HIMAC), Japan. From these microdosimetric spectra, dose mean lineal energy $(\overline{{y}_{D})}$ and RBE10 results were obtained, with RBE10 increasing from 1.3 at the entrance to 2.7 at the end of the SOBP. The results obtained in this work show that the new generation of mushroom microdosimeters, covered with tissue equivalent polyimide material, are a useful tool for quality assurance in heavy ion therapy applications. © Open Access - CC BY - IOP Publishing Ltd.
- ItemCharacterization of MOSFET sensors for dosimetry in alpha particle therapy(Australian Nuclear Science and Technology Organisation, 2021-11-24) Su, FY; Biasi, G; Tran, LT; Pan, VA; Hill, D; Lielkajis, M; Cutajar, D; Petasecca. M; Lerch, MLF; Pastuovic, Z; Poder, J; Joseph, B; Jackson, M; Anatoly, RBAlpha particle therapy, such as diffusing alpha-emitters radiation therapy (DaRT) and targeted alpha-particle therapy (TAT), exploits the short-range and high linear energy transfer (LET) of alpha particles to destroy cancer cells locally with minimal damage to surrounding healthy cells. Dosimetry for DaRT and TAT is challenging, as their radiation sources produce mixed radiation fields of α particles, β particles, and γ rays. There is currently no dosimeter for real-time in vivo dosimetry of DaRT or TAT. Metal-oxide-semiconductor field-effect transistors (MOSFETs) have features that are ideal for this scenario. Owing to their compactness, MOSFETs can fit into fine-gauge needle applicators, such as those used to carry the radioactive seeds into the tumour. This study characterized the response of MOSFETs designed at the Centre for Medical and Ra diation Physics, University of Wollongong. MOSFETs with three different gate oxide thicknesses (0.55 µm, 0.68 µm, and 1.0 µm) were irradiated with a 5.5 MeV mono-energetic helium ion beam (He2+) using SIRIUS 6MV accelerator tandem at the Australian Nuclear Science and Technology Organization (ANSTO) and an Americium-241 (241Am) source. The sensitivity and dose-response linearity were assessed by analysing the spatially resolved median energy maps of each device and their corresponding voltage shift values. The re sults showed that the response of the MOSFET detectors was linear with alpha dose up to 25.68 Gy. Also, it was found that a gate bias of between 15 V and 60 V would optimize the sensitivity of the detectors to alpha particles with energy of 5.5 MeV. © The Authors.
- ItemCharge collection in SOI microdosimeters and their radiation hardness(IEEE, 2023-02-03) Pan, VA; Tran, LT; Pastuovic, Z; Hill, D; Williams, JB; Kok, A; Povoli, M; Pogossov, A; Peracchi, S; Boardman, DA; Davis, J; Guatelli, S; Petasecca, M; Lerch, MLF; Rosenfeld, ABA new batch of microdosimeters has been extensively studied for their charge collection efficiency (CCE) properties, as well as their radiation hardness for medical, space and accident applications. Silicon-on-insulator (SOI) microdosimeters with an active layer thickness of 10, 20 and 50 μm have been investigated and were characterized with a 24 MeV carbon ion beam as well as a Co-60 gamma source. A negative pulse was observed in addition to the positive pulses generated within the sensitive volumes (SVs) by incident ions which led to undesirable low energy events in the SOI microdosimeters response. To study this phenomenon, the microdosimeters were irradiated with gamma radiation from a Co-60 source with a total dose of 3 and 10 Mrad(Si). It was determined that the negative pulse was originating from the support wafer due to the displacement current phenomenon. Irradiation with the Co-60 source led to a disappearing of the negative pulse due to an increase in recombination within the support wafer while almost no changes in CCE were observed. A radiation hardness study was also performed on the 50 μm SOI microdosimeter with 16 SVs being irradiated with a fluence of ~ 10 8 12 C ions/cm 2 . A CCE deficit of approximately 2% was observed at an operation bias of 10V within the SVs. The findings of this work demonstrate that the SOI microdosimeters can be utilized in space and medical applications as they can handle typical levels of dose encountered in these applications. Additionally, evidence for SOI microdosimeter fabrication standards in terms of support wafer resistivity and buried oxide (BOX) thickness is shown. © 2023 IEEE
- ItemDevelopment of a large-area silicon α-particle detector(Elsevier, 2014-09) Tran, LT; Prokopovich, DA; Lerch, MLF; Petasecca, M; Siegele, R; Reinhard, MI; Perevertaylo, VL; Rosenfeld, ABCircular ion-implanted silicon detector of α-particles with a large, 5-cm2, sensitive area has been developed. An advantage of the detector is that the detector surface is easily cleanable with chemicals. The hardened surface of the detector shows no signs of deterioration of the spectroscopic and electrical characteristics upon repeated cleaning. The energy resolution along the diameters of the detector was (1.0±0.1)% for the 5.486-MeV α-particles. Detailed tests of the charge collection efficiency and uniformity of the detector entrance window were also performed with a 5.5-MeV He2+ microbeam. © 2014, Elsevier Ltd.
- ItemIBIC microscopy – the powerful tool for testing micron – sized sensitive volumes in segmented radiation detectors used in synchrotron microbeam radiation and hadron therapies(Elsevier B. V., 2019-11-01) Pastuovic, Z; Davis, J; Tran, LT; Paino, JR; Dipuglia, A; James, B; Povoli, M; Kok, A; Perevertaylo, VL; Siegele, R; Prokopovich, DA; Lerch, MLF; Petasecca, M; Rosenfeld, AB; Cohen, DDIon Beam Induced Charge (IBIC) microscopy performed using highly tuned microbeams of accelerated ions with energies in the MeV range is the powerful tool for analysis of charge carrier transport properties in semiconductor devices based on semiconductor hetero-junction, metal-on-semiconductor and semiconductor-on-insulator configurations. Here we present two cases of recent applications of the IBIC microscopy in the field of medical radiation physics. The reduced-rate ion microbeams with energies in the MeV range and sub-micrometer spot-sizes have been used for the investigations of the charge collection efficiency (CCE) in sensitive volumes of segmented radiation detectors in order to measure the spatial distribution and uniformity of CCE in different polarization conditions. This information allows the determination of the charge carrier transport properties in selected substructures of a particular device and to quantify its ability to accurately determine the energy deposited by incident ionizing radiation - two fundamental requirements of any microdosimeter or detector of ionizing radiation. © 2019 Elsevier B.V.
- ItemA novel silicon microdosimeter using 3D sensitive volumes: modeling the response in neutron fields typical of aviation(IEEE Xplore Digital Library, 2014-08-04) Tran, LT; Guatelli, S; Prokopovich, DA; Petasecca, M; Lerch, MLF; Reinhard, MI; Zeigler, JF; Zaider, M; Rosenfeld, ABA 4th generation silicon microdosimeter has been designed by the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong using three dimensional (3D) Sensitive Volumes (SVs). This new microdosimeter design has the advantage of well-defined 3D SVs as well as the elimination of lateral charge diffusion by removal of silicon laterally adjacent to the 3D SVs. The gaps between the sensitive volumes are to be backfilled with PolyMethyl MethAcrylate (PMMA) to produce a surrounding tissue equivalent medium. The advantage of this design avoids the generation of secondary particles from inactive silicon lateral to SVs. The response of the microdosimeter to the neutron field from , Pu-Be sources and an avionic radiation environment were simulated using the Geant4 Monte Carlo toolkit for design optimisation. The simulated energy deposition in the SVs from the neutron fields and microdosimetric spectra is presented. The simulation study shows a significant reduction in silicon nuclear recoil contribution to the energy deposition for the novel microdosimeter design. The reduction of silicon recoil events from outside of the SV’s will consequently reduce the uncertainty in the calculateddose equivalent. The simulations have demonstrated that a 3D silicon microdosimeter surrounded by PMMA can produce microdosimetric spectra similar to those of a tissue equivalent microdosimeter. © 2014, IEEE.